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 7MBR 10SA-120
Power Integrated Module (PIM) I Features
* NPT-Technology * Solderable Package * Square SC SOA at 10 x IC * High Short Circuit Withstand-Capability * Small Temperature Dependence of the Turn-Off Switching Loss * Low Losses And Soft Switching
IGBT PIM 1200V 6x10A+Chopper
I Outline Drawing
I Equivalent Circuit
I Absolute Maximum Ratings ( Tc=25C)
Items Inverter
Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) 2 It (Non Repetitive) Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque*
Symbols
VCES VGES IC IC PULSE -IC PULSE PC VRRM IO IFSM VCES VGES IC IC PULSE PC VRRM Tj TStg VISO
Test Conditions
Continuous 1ms 1 device 50Hz/60Hz sinus wave Tj=150C, 10 ms, sinus wave 25C / 80C 25C / 80C
Ratings
1200 20 15 / 10 30 / 20 10 75 1600 10 105 55 1200 20 15 / 10 30 / 20 75 1200 +150 -40 +125 2500 3.5
Units
V A W V A As V A W V C V Nm
2
Brake Chopper
Rectifier
Continuous 1ms 1 device
25C / 80C 25C / 80C
A.C. 1min.
Note: *:Recommendable Value; 2.5 3.5 Nm (M5)
7MBR 10SA-120
I Electrical Characteristics( Tj=25C )
Items
Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage
IGBT PIM 1200V 6x10A+Chopper
Symbols
ICES IGES VGE(th) VCE(sat) Cies ton tr,x tr,i toff tf VF trr VFM IRRM ICES IGES VCE(sat) ton tr,x toff tf IRRM R B
Test Conditions
VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=10mA VGE=15V Chip IC = 10A Terminal f=1MHz, VGE=0V, VCE=10V VCC = 600V IC = 10A VGE = 15V RG = 120 Inductive Load IF=10A IF=10A IF=10A Chip Terminal Chip Terminal
Min.
5.5
Typ. Max. Units
7.2 2.1 2.15 1200 0.35 0.25 0.10 0.45 0.08 2.3 2.35 1.1 1.2 1.0 200 8.5 2.7 pF 1.2 0.6 1.0 0.3 s mA nA V
Inverter IGBT
Input Capacitance Turn-on Time
Turn-off Time
FRD
Diode Forward On-Voltage Reverse Recovery Time Forward Voltage Reverse Current Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current
3.2 350 1.5 1.0 1.0 200 2.6 1.2 0.6 1.0 0.3 1.0 520 3450
V ns V mA mA nA V
Rectifier
NTC
Resistance B Value
VR =1600V VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=10V Chip IC=10A Terminal VCC = 600V IC = 10A VGE = 15V RG = 120 VR=1200V T= 25C T=100C T=25 / 50C
Brake Chopper
2.10 2.20 0.35 0.25 0.45 0.08 5000 495 3375
s mA K
465 3305
I Thermal Characteristics
Items
Thermal Resistance (1 device)
Symbols
Rth(j-c) Rth(c-f)
Test Conditions
Inverter IGBT Inverter FRD Brake IGBT Rectifier Diode With Thermal Compound
Min.
Typ. Max. Units
1.67 2.78 1.67 C/W 1.85 0.05
Contact Thermal Resistance
7MBR 10SA-120
IGBT PIM 1200V 6x10A+Chopper
7MBR 10SA-120
IGBT PIM 1200V 6x10A+Chopper
7MBR 10SA-120
IGBT PIM 1200V 6x10A+Chopper
7MBR 10SA-120
IGBT PIM 1200V 6x10A+Chopper
Specification is subject to change without notice
January 1999b


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